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 AWT6307R
HELP
TM
Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
* * InGaP HBT Technology High Efficiency: 21 % @ +16 dBm output 40 % @ +28 dBm output * * * * * * * * Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1 A Internal Voltage Regulation Optimized for a 50 System Low Profile Surface Mount Package: 1 mm CDMA 1XRTT, 1xEV-DO Compliant Pinout Enables Easy Phone Board Migration From 4 mm x 4 mm Package RoHS Compliant Package, 250 oC MSL-3
AW T63 07
R
APPLICATIONS
* CDMA Wireless Handsets and Data Devices
M9 Package 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
PRODUCT DESCRIPTION
The AWT6307R meets the increasing demands for higher efficiency and smaller footprint in CDMA 1X handsets. The package pinout was chosen to enable handset manufacturers to switch from a 4 mm x 4 mm PA module with few layout changes while reducing board area requirements by 44 %. The AWT6307R uses ANADIGICS' exclusive InGaPPlusTM technology, which combines HBT and pHEMT devices on the same die, to enable stateof-the-art reliability, temperature stability, and ruggedness. The AWT6307R is part of ANADIGICS' High-Efficiency-at-Low-Power (HELPTM) family of CDMA power amplifiers, which deliver low quiescent currents and significantly greater efficiency without a costly external DAC or DC-DC converter. Through selectable bias modes, the AWT6307 achieves optimal efficiency across different output power levels, specifically at low- and mid-range power levels where the PA typically operates, thereby dramatically increasing handset talk-time and standby-time. Its built-in voltage regulator eliminates the need for external voltage regulation components. The 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 system.
03/2006
GND at slug (pad) VEN
1 8
GND
Bias Control
VMODE 2
7
RFOUT
RFIN 3
6
GND
VBATT 4
5
VCC
Figure 1: Block Diagram
AWT6307R
GND VEN 1 8 GND
VMODE
2
7
RFOUT
RFIN
3
6
GND
VBATT
4 GND
5
Figure 2: Pinout (X-ray Top View)
VCC
Table 1: Pin Description
PIN 1 2 3 4 5 6 7 8 NAME V EN VMODE RFIN VBATT V CC GND RFOUT GND DESCRIPTION PA Enable Voltage Mode Control RF Input Battery Voltage Supply Voltage Ground RF Output Ground
2
PRELIMINARY DATA SHEET - Rev 1.0 03/2006
AWT6307R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER Supply Voltage (VCC and VBATT) Mode Control Voltage (VMODE) Enable Voltage (VEN) RF Input Power (PIN) Storage Temperature (TSTG)
MIN 0 0 0 -40
MAX +5 +3.5 +3.5 +10 +150
UNIT V V V dB m C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER Operating Frequency (f) Supply Voltage (VCC and VBATT) Enable Voltage (VEN) Mode Control Voltage (VMODE) RF Output Power (POUT) Case Temperature (TC) MIN 824 +3.2 +2.2 0 +2.2 0 27.5(1) -30 TYP +3.4 +2.4 +2.4 28.0 MAX 849 +4.2 +3.1 +0.5 +3.1 +0.5 +85 UNIT MHz V V V dB m C PA "on" PA "shut down" Low Bias Mode High Bias Mode CDMA COMMENTS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
PRELIMINARY DATA SHEET - Rev 1.0 03/2006
3
AWT6307R Table 4: Electrical Specifications - CDMA Operation (TC = +25 C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 system)
PARAMETER MIN 25 15 16 TYP 27 17 17.5 MAX 30 19 20 UNIT COMMENTS POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +17 dBm, VMODE = +2.4 V, VCC = +3.7 V
Gain
dB
Adjacent Channel Power at 885 kHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz
-
-50 -57 -55
-47 -47 -47
dB c
POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +17 dBm, VMODE = +2.4 V, VCC = +3.7 V
Adjacent Channel Power at 1.98 MHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz Power-Added Efficiency (1) Quiescent Current (Icq) Enable Current Battery Current Mode Control Current Leakage Current Noise in Receive Band Harmonics 2fo 3fo, 4fo Input Impedance
37 17 -
-63 -61 40 21 14 0.4 2.5 0.5 <1 -133 -42 -50 -
-57 -57 20 0.8 5 0.8 5 -131 -30 -30 2:1
dB c % mA mA mA mA A dBm/Hz
POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V VMODE = +2.4 V, Low Bias through VEN pin, VMODE = +2.4 V through VBATT pin, VMODE = +2.4 V through VMODE pin, VMODE = +2.4 V VCC = +4.2 V, VEN = 0 V, VMODE = 0 V 869 MHz to 894 MHz
dB c
VSWR POUT < +28 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions Applies over all operating conditions
Spurious Output Level (all spurious outputs)
-
-
-65
dB c
Load mismatch stress with no permanent degradation or failure
8:1
-
-
VSWR
Notes: (1) PAE and ACP limit applies at 836.5 MHz.
4
PRELIMINARY DATA SHEET - Rev 1.0 03/2006
AWT6307R
APPLICATION INFORMATION
To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying a logic low levels (see Operating Ranges table) to both the VREF and VMODE voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications.
Table 5: Bias Control
APPLICATION CDMA - low power CDMA - high power Shutdown POUT LE V E LS <+16 dBm >+16 dBm BIAS MODE Low High Shutdown V EN +2.4 V +2.4 V 0V VMODE +2.4 V 0V 0V
VENABLE
C6 1 F
1 2
VENABLE VMODE RFIN VBATT
GND RFOUT GND VCC GND at slug
8 7 6 5
C5 68 pF
VMODE
RFIN
VBATT
C7 68 pF*
RFOUT
3 4
VCC
C1 10 F
C4 68 pF
C2 10 F
Note: * This capacitor is only needed if a DC voltage is present on the RF input pin
Figure 3: Application Circuit
PRELIMINARY DATA SHEET - Rev 1.0 03/2006
5
AWT6307R
PACKAGE OUTLINE
Figure 4: M9 Package Outline - 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Figure 5: Branding Specification 6
PRELIMINARY DATA SHEET - Rev 1.0 03/2006
AWT6307R
COMPONENT PACKAGING
Pin 1
Figure 6: Tape & Reel Packaging
Table 6: Tape & Reel Dimensions
PACKAGE TYPE 3 mm x 3 mm x 1 mm TAPE WIDTH 12 mm POCKET PITCH 4 mm REEL CAPACITY 2500 MAX REEL DIA 7"
PRELIMINARY DATA SHEET - Rev 1.0 03/2006
7
AWT6307R
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE RANGE -30 C to +85 C PACKAGE DESCRIPTION RoHS Compliant 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module COMPONENT PACKAGING
AWT6307RM9Q7
Tape and Reel, 2500 pieces per Reel
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
8
PRELIMINARY DATA SHEET - Rev 1.0 03/2006


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